Patents Published for Vertical 4H-SiC Trench MOSFET with Post-Fabrication Bonded Diamond Structural Substrate for Enhanced Thermal Management from Indian Patent Office on the year 2026(202641023038)
Patents Published for Monolithic Vertically Stacked Complementary Field-Effect Transistor with Multifunctional Hexagonal Boron Nitride Interlayer and Sequential Two-Dimensional Channel Formation from Indian Patent Office on the year 2026(202641022289)
Patents Published for Microwave Reasonator based Micropalstic Detection System in Aquatic Environment from Patent office India on the year 2025(202541130514)
Patents Published for Triboelectric Nanogenerator Device For Harvesting Energy From Shuttlecock from IP GOVT OF INDIA on the year 2025(202541044341)
Patents Published for HUMAN BODY 3D SCANNER from IP GOVT OF INDIA on the year 2024(202441066516)
Patents Published for A MACHINE FOR BUNDLING LEAFY PLANTS from IP GOVT OF INDIA on the year 2024(202441064760)
Patents Filed for Automatic Leg massager and Reflexology System for Healthy Living from Chennai on the year 2020(13526)
Impact of geometrical parameters on sensitivity and selectivity in InGaN notch-engineered AlGaN/GaN MOSHEMT biosensor ,2026, Microsystem Technologies
Impact on Breakdown Voltage for AlGaN Channel E-HEMT Device used with the DC Boost Converter Circuit ,2025, International Journal of Electrical and Electronics Research
Enhancement of DC and Breakdown Performance on Single to Multi-Step Gate FP Using GaN-HEMT for High Power Applications ,2020, Silicon
Device characteristics of enhancement mode doubleheterostructure DHHEMT with borondoped GaNgate cap layer for fullbridge inverter circuit ,2017, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Efficient IIINitride MIS-HEMT devices with high- gate dielectric for high-power switching boost converter circuits ,2017, Superlattices and Microstructures
FInvestigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications ,2017, Physica E: Low-dimensional Systems and Nanostructures
In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications ,2017, JOURNAL OF COMPUTATIONAL ELECTRONICS
Simulation of InGaAs subchannel DG-HEMTs for analogue/RF applications ,2017, International Journal of Electronics
Polarization and carrier density model for AlGaN channel with AlN buffer for Low Al composition ,2015, WORLD JOURNAL OF CONDENSED MATTER PHYSICS
Threading Dislocation Degradation of InSb to InAsSbSubchannel Double Heterostructures ,2015, Electron Material Letters
Modeling of sheet carrier density and microwave frequency characteristics in Spacer based AlGaN/AlN/GaN HEMT devices ,2014, Solid-State Electronics
Impact of gate length and barrier thickness on performance of InP/InGaAs based Double Gate MetalOxide-Semiconductor Heterostructure Field-Effect Transistor (DG MOS-HFET) ,2013, Superlattices and Microstructures
Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices ,2013, Superlattices and Microstructures
Performance assessment of gate material engineered AlInN/GaNunderlap DG MOSFET for enhanced carrier transport efficiency ,2013, Superlattices and Microstructures
Polarizationbasedchargedensitydraincurrentandsmall-signal model for nano-scale AlInGaN/AlN/GaNHEMT devices ,2013, Superlattices and Microstructures
Comparative assessment of IIIV heterostructure and silicon underlap double gate MOSFETs ,2012, Semiconductors
Effect of Barrier layer thickness on device performance of AlInN/GaNUnderlap DG MOSFET ,2012, CODIS
Effect of underlap and gate length on device performance of an AlInN/GaN underlap MOSFET ,2012, Journal of Semiconductors
Investigation of asymmetric effects due to gate misalignment, gate bias and underlap length in IIIV heterostructure underlap DG MOSFET ,2012, Physica E: Low-dimensional Systems and Nanostructures
physics based charge and drain current model for AlGaN/GaN hemt devices ,2012, Journal of Electron devices
Training programs attended
Administrative Training Program OBE-Computation & Attainments and Accreditation Workspace in AES, Amal Jyothi College of Engineering, Amal Jyothi College of Engineering, from 2022-12-12 to 2022-12-16
Basics and Best practices for Fruitful Research, Amal Jyothi College of Engineering, Amal Jyothi College of Engineering, from 2022-01-10 to 2022-01-14
Administrative Training Program - Moodle LMS Management, Marian College Kuttikkanam (Autonomous), Amal Jyothi College of Engineering, from 2020-07-16 to 2020-08-04
Modern Research Strategies in Condition Monitoring of Power Equipment, Saintgits College of Engineering, SAINTGITS COLLEGE OF ENGINEERING, KOTTAYAM, from 2019-12-09 to 2019-12-13
Administrative Training Program Essentials of OBE and NBA / NAAC documentation, Amal Jyothi College of Engineering, Amal Jyothi College of Engineering, from 2019-08-26 to 2019-08-30
Empowering Educators: A Comprehensive Approach to Mentor-
Mentee Schemes, Blooms Taxonomy, and ICT in Teaching, Amal Jyothi College of Engineering, Amal Jyothi College of Engineering, from 2018-12-26 to 2018-12-30
Funded Projects
Blockage Detection in Coronary and Peripheral Arteries, PI, Fund-Amal Jyothi College of Engineering, Kanjirappally, from 2025-08-01 to 2026-06-20
Dr. Godwinraj D
Professor, Electronics & Communication Engineering
Date of Joining : 22-12-2016